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1 MRF21060 MRF21060r3 MRF21060sr3 motorola rf device data the rf mosfet line nCchannel enhancementCmode lateral mosfets designed for pcn and pcs base station applications with frequencies from 2.1 to 2.2 ghz. suitable for wCcdma, cdma, tdma, gsm and multicarrier amplifier applications. ? typical wCcdma performance: 2140 mhz, 28 volts 5 mhz offset @ 4.096 mhz bw, 15 dtch output power 6.0 watts power gain 12.5 db drain efficiency 15% ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2.11 ghz, 60 watts cw output power ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drainCsource voltage v dss 65 vdc gateCsource voltage v gs C0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 180 0.98 watts w/ c storage temperature range t stg C65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 1.02 c/w note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF21060/d semiconductor technical data 2170 mhz, 60 w, 28 v lateral nCchannel rf power mosfets case 465C06, style 1 niC780 MRF21060 case 465aC06, style 1 niC780s MRF21060sr3 ? motorola, inc. 2002 rev 5
MRF21060 MRF21060r3 MRF21060sr3 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainCsource breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 65 vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss 6 adc gateCsource leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 500 madc) v gs(q) 2.5 3.9 4.5 vdc drainCsource onCvoltage (v gs = 10 vdc, i d = 2 adc) v ds(on) 0.27 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs 4.7 s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss 2.7 pf functional tests (in motorola test fixture, 50 ohm system) twoCtone commonCsource amplifier power gain (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) g ps 11 12.5 db twoCtone drain efficiency (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) 31 34 % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) imd C30 C28 dbc input return loss (v dd = 28 vdc, p out = 60 w pep, i dq = 500 ma, f = 2110 mhz and 2170 mhz, tone spacing = 100 khz) irl C12 db p out , 1 db compression point (v dd = 28 vdc, p out = 60 w cw, f = 2170 mhz) p1db 60 w output mismatch stress (v dd = 28 vdc, p out = 60 w cw, i dq = 500 ma, f = 2110 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output.
3 MRF21060 MRF21060r3 MRF21060sr3 motorola rf device data figure 1. MRF21060 test circuit schematic b2 C b3 ferrite beads, fair rite #2743019447 c1 10 f, 50 v electrolytic chip capacitor, panasonic #ecev1hv100r c2, c7 1000 pf chip capacitors, atc #100b102jca500x c3, c8 0.10 f chip capacitors, kemet #cdr33bx104akws c4, c5 4.7 pf chip capacitors, atc #100b4r7jca500x c6 22 f, 35 v tantalum surface mount chip capacitor, sprague c9, c11 9.1 pf chip capacitors, atc #100b9r1jca500x c10 0.8 pf C 8.0 pf variable capacitor, johanson gigatrim c12 0.4 pf C 4.5 pf variable capacitor, johanson gigatrim r1 1 k ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r2 560 k ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r3 10 ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 r4 10 ? , 1/4 w fixed film chip resistor, 0.08 x 0.13 z1 0.743 x 0.080 microstrip z2 0.070 x 0.100 microstrip z3 0.180 x 0.100 microstrip z4 0.152 x 0.293 microstrip z5 0.216 x 0.100 microstrip z6 0.114 x 0.410 microstrip z7 0.626 x 0.872 microstrip z8 1.050 x 0.050 microstrip z9 0.830 x 0.050 microstrip z10 0.596 x 1.040 microstrip z11 0.186 x 0.315 microstrip z12 0.097 x 0.525 microstrip z13 0.353 x 0.138 microstrip z14 0.112 x 0.080 microstrip z15 0.722 x 0.080 microstrip board 0.030 glass teflon ? , arlon gxC0300C55C22, 2 oz cu
MRF21060 MRF21060r3 MRF21060sr3 4 motorola rf device data figure 2. MRF21060 test circuit component layout MRF21060
5 MRF21060 MRF21060r3 MRF21060sr3 motorola rf device data typical characteristics figure 3. class ab broadband circuit performance figure 4. wCcdma acpr, power gain and drain efficiency versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain versus output power figure 8. power gain and intermodulation distortion versus supply voltage
MRF21060 MRF21060r3 MRF21060sr3 6 motorola rf device data figure 9. series equivalent input and output impedance f mhz z in ? z ol * ? 2110 2140 2170 2.40 + j0.55 2.08 + j1.23 2.26 + j0.87 3.07 + j2.05 2.89 + j2.38 2.66 + j2.71 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. ?
7 MRF21060 MRF21060r3 MRF21060sr3 motorola rf device data package dimensions case 465C06 issue f niC780 MRF21060

d g k c e h s f q 2x b b (flange)

aa (flange) t n (lid) m (insulator) (insulator) r (lid) case 465aC06 issue f niC780s MRF21060sr3

d k c e h f u (flange) 4x z (lid) 4x
b b (flange) 2x

a a (flange) t n (lid) m (insulator) r (lid) s (insulator)
MRF21060 MRF21060r3 MRF21060sr3 8 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF21060/d ?

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